2023-12-212023-12-212022-01-10Kaloyeros, A.E.; Goff, J.; Arkles, B. Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane. Electron. Mater. 2022, 3, 27-40. https://doi.org/10.3390/electronicmat30100032673-3978http://hdl.handle.net/20.500.12613/9283Stoichiometric silicon carbide (SiC) thin films were grown using thermal chemical vapor deposition (TCVD) from the single source precursor 1,3,5-trisilacyclohexane (TSCH) on c-Si (100) substrates within an optimized substrate temperature window ranging from 650 to 850 ◦C. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) analyses revealed that the as-deposited films consisted of a Si-C matrix with a Si:C ratio of ~1:1. FTIR and photoluminescence (PL) spectrometry studies showed that films deposited ≥ 750 ◦C were defect- and H-free within the detection limit of the techniques used, while ellipsometry measurements yielded an as-grown SiC average refractive index of ~2.7, consistent with the reference value for the 3C-SiC phase. The exceptional quality of the films appears sufficient to overcome limitations associated with structural defects ranging from failure in high voltage, high temperature electronics to 2-D film growth. TSCH, a liquid at room temperature with good structural stability during transport and handling as well as high vapor pressure (~10 torr at 25 ◦C), provides a viable single source precursor for the growth of stoichiometric SiC without the need for post-deposition thermal treatment.14 pagesengAttribution CC BYhttps://creativecommons.org/licenses/by/4.0/Silicon carbideSiCChemical vapor depositionCVDThin filmOrganosiliconText