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Review—Silicon Carbide Thin Film Technologies: Recent Advances in Processing, Properties, and Applications: Part II. PVD and Alternative (Non-PVD and Non-CVD) Deposition Techniques
Kaloyeros, Alain E. Arkles, Barry
Kaloyeros, Alain E.
Arkles, Barry
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Journal article
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2024-04-03
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Chemistry
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https://doi.org/10.1149/2162-8777/ad3672
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Silicon carbide (SiCx) thin films deposition processes fall primarily into three main categories: (1) chemical vapor deposition (CVD) and its variants, including plasma enhanced CVD (PE-CVD); (2) physical vapor deposition (PVD), including various forms of sputtering; (3) alternative (non-CVD and non-PVD) methodologies. Part I of this two-part report ECS J. Solid State Sci. Technol., 12, 103001 (2023) examined recent peer-reviewed publications available in the public domain pertaining to the various CVD processes for SiCx thin films and nanostructures, as well as CVD modeling and mechanistic studies. In Part II, we continue our detailed, systematic review of the latest progress in cutting-edge SiCx thin film innovations, focusing on PVD and other non-PVD and non-CVD SiCx coating technologies. Particular attention is given to pertinent experimental details from PVD and alternative (non-CVD and non-PVD) processing methodologies as well as their influence on resulting film properties and performance.
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Alain E. Kaloyeros and Barry Arkles 2024 ECS J. Solid State Sci. Technol. 13 043001
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The Electrochemical Society
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ECS Journal of Solid State Science and Technology, Vol. 13, Iss. 4
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