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Electronic structure of the dilute magnetic semiconductor G a1-x M nx P from hard x-ray photoelectron spectroscopy and angle-resolved photoemission
Keqi, A Gehlmann, M Conti, G Nemšák, S Rattanachata, A Minár, J Plucinski, L Rault, JE Rueff, JP Scarpulla, M
Keqi, A
Gehlmann, M
Conti, G
Nemšák, S
Rattanachata, A
Minár, J
Plucinski, L
Rault, JE
Rueff, JP
Scarpulla, M
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2018-04-23
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10.1103/PhysRevB.97.155149
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© 2018 American Physical Society. We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) Ga0.98Mn0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between Ga0.98Mn0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The Ga0.98Mn0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations and a prior HARPES study of Ga0.97Mn0.03As and GaAs [Gray, Nat. Mater. 11, 957 (2012)10.1038/nmat3450], demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP.
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Physical Review B
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