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dc.creatorTsai, Jeng-Yuan
dc.creatorPan, Jinbo
dc.creatorLin, Hsin
dc.creatorBansil, Arun
dc.creatorYan, Qimin
dc.date.accessioned2023-12-21T18:33:38Z
dc.date.available2023-12-21T18:33:38Z
dc.date.issued2022-01-25
dc.identifier.citationTsai, JY., Pan, J., Lin, H. et al. Antisite defect qubits in monolayer transition metal dichalcogenides. Nat Commun 13, 492 (2022). https://doi.org/10.1038/s41467-022-28133-x
dc.identifier.issn2041-1723
dc.identifier.urihttp://hdl.handle.net/20.500.12613/9318
dc.description.abstractBeing atomically thin and amenable to external controls, two-dimensional (2D) materials offer a new paradigm for the realization of patterned qubit fabrication and operation at room temperature for quantum information sciences applications. Here we show that the antisite defect in 2D transition metal dichalcogenides (TMDs) can provide a controllable solid-state spin qubit system. Using high-throughput atomistic simulations, we identify several neutral antisite defects in TMDs that lie deep in the bulk band gap and host a paramagnetic triplet ground state. Our in-depth analysis reveals the presence of optical transitions and triplet-singlet intersystem crossing processes for fingerprinting these defect qubits. As an illustrative example, we discuss the initialization and readout principles of an antisite qubit in WS2, which is expected to be stable against interlayer interactions in a multilayer structure for qubit isolation and protection in future qubit-based devices. Our study opens a new pathway for creating scalable, room-temperature spin qubits in 2D TMDs.
dc.format.extent9 pages
dc.languageEnglish
dc.language.isoeng
dc.relation.ispartofFaculty/ Researcher Works
dc.relation.haspartNature Communications, Vol. 13
dc.relation.isreferencedbyNature Research
dc.rightsAttribution CC BY
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectQubits
dc.subjectTwo-dimensional materials
dc.titleAntisite defect qubits in monolayer transition metal dichalcogenides
dc.typeText
dc.type.genreJournal article
dc.description.departmentPhysics
dc.relation.doihttp://dx.doi.org/10.1038/s41467-022-28133-x
dc.ada.noteFor Americans with Disabilities Act (ADA) accommodation, including help with reading this content, please contact scholarshare@temple.edu
dc.description.schoolcollegeTemple University. College of Science and Technology
dc.creator.orcidPan|0000-0003-2612-8232
dc.temple.creatorTsai, Jeng-Yuan
dc.temple.creatorPan, Jinbo
dc.temple.creatorYan, Qimin
refterms.dateFOA2023-12-21T18:33:38Z


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