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dc.creatorTai, T
dc.creatorGhamsari, BG
dc.creatorTan, T
dc.creatorZhuang, CG
dc.creatorXi, XX
dc.creatorAnlage, SM
dc.date.accessioned2021-02-04T20:15:48Z
dc.date.available2021-02-04T20:15:48Z
dc.date.issued2012-12-10
dc.identifier.issn1098-4402
dc.identifier.issn1098-4402
dc.identifier.doihttp://dx.doi.org/10.34944/dspace/5961
dc.identifier.other050QG (isidoc)
dc.identifier.urihttp://hdl.handle.net/20.500.12613/5979
dc.description.abstractThe high transition temperature and low surface resistance of MgB 2 attracts interest in its potential application in superconducting radio frequency accelerating cavities. However, compared to traditional Nb cavities, the viability of MgB2 at high rf fields is still open to question. Our approach is to study the nonlinear electrodynamics of the material under localized rf magnetic fields. Because of the presence of the small superconducting gap in the π band, the nonlinear response of MgB2 at low temperature is potentially complicated compared to a single-gap s-wave superconductor such as Nb. Understanding the mechanisms of nonlinearity coming from the two-band structure of MgB2, as well as extrinsic sources of nonlinearity, is an urgent requirement. A localized and strong rf magnetic field, created by a magnetic write head, is integrated into our nonlinear-Meissner-effect scanning microwave microscope. MgB2 films with thickness 50 nm, fabricated by a hybrid physical-chemical vapor deposition technique on dielectric substrates, are measured at a fixed location and show a strongly temperature-dependent third harmonic response. We propose that several possible mechanisms are responsible for this nonlinear response.
dc.format.extent122002-
dc.language.isoen
dc.relation.haspartPhysical Review Special Topics - Accelerators and Beams
dc.relation.isreferencedbyAmerican Physical Society (APS)
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/
dc.subjectcond-mat.supr-con
dc.subjectcond-mat.supr-con
dc.subjectcond-mat.mes-hall
dc.titleMgB<inf>2</inf> nonlinear properties investigated under localized high rf magnetic field excitation
dc.typeArticle
dc.type.genreJournal Article
dc.relation.doi10.1103/PhysRevSTAB.15.122002
dc.ada.noteFor Americans with Disabilities Act (ADA) accommodation, including help with reading this content, please contact scholarshare@temple.edu
dc.date.updated2021-02-04T20:15:44Z
refterms.dateFOA2021-02-04T20:15:49Z


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