Correlation-Driven Insulator-Metal Transition in Near-Ideal Vanadium Dioxide Films
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Journal ArticleDate
2016-03-18Author
Gray, AXJeong, J
Aetukuri, NP
Granitzka, P
Chen, Z
Kukreja, R
Higley, D
Chase, T
Reid, AH
Ohldag, H
Marcus, MA
Scholl, A
Young, AT
Doran, A
Jenkins, CA
Shafer, P
Arenholz, E
Samant, MG
Parkin, SSP
Dürr, HA
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http://hdl.handle.net/20.500.12613/5726
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10.1103/PhysRevLett.116.116403Abstract
© 2016 American Physical Society. We use polarization- and temperature-dependent x-ray absorption spectroscopy, in combination with photoelectron microscopy, x-ray diffraction, and electronic transport measurements, to study the driving force behind the insulator-metal transition in VO2. We show that both the collapse of the insulating gap and the concomitant change in crystal symmetry in homogeneously strained single-crystalline VO2 films are preceded by the purely electronic softening of Coulomb correlations within V-V singlet dimers. This process starts 7 K (±0.3 K) below the transition temperature, as conventionally defined by electronic transport and x-ray diffraction measurements, and sets the energy scale for driving the near-room-temperature insulator-metal transition in this technologically promising material.Citation to related work
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http://dx.doi.org/10.34944/dspace/5708