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    Correlation-Driven Insulator-Metal Transition in Near-Ideal Vanadium Dioxide Films

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    1503.07892v1.pdf
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    Genre
    Journal Article
    Date
    2016-03-18
    Author
    Gray, AX
    Jeong, J
    Aetukuri, NP
    Granitzka, P
    Chen, Z
    Kukreja, R
    Higley, D
    Chase, T
    Reid, AH
    Ohldag, H
    Marcus, MA
    Scholl, A
    Young, AT
    Doran, A
    Jenkins, CA
    Shafer, P
    Arenholz, E
    Samant, MG
    Parkin, SSP
    Dürr, HA
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    Subject
    cond-mat.str-el
    cond-mat.str-el
    Permanent link to this record
    http://hdl.handle.net/20.500.12613/5726
    
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    DOI
    10.1103/PhysRevLett.116.116403
    Abstract
    © 2016 American Physical Society. We use polarization- and temperature-dependent x-ray absorption spectroscopy, in combination with photoelectron microscopy, x-ray diffraction, and electronic transport measurements, to study the driving force behind the insulator-metal transition in VO2. We show that both the collapse of the insulating gap and the concomitant change in crystal symmetry in homogeneously strained single-crystalline VO2 films are preceded by the purely electronic softening of Coulomb correlations within V-V singlet dimers. This process starts 7 K (±0.3 K) below the transition temperature, as conventionally defined by electronic transport and x-ray diffraction measurements, and sets the energy scale for driving the near-room-temperature insulator-metal transition in this technologically promising material.
    Citation to related work
    American Physical Society (APS)
    Has part
    Physical Review Letters
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    ae974a485f413a2113503eed53cd6c53
    http://dx.doi.org/10.34944/dspace/5708
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