Tunable electroresistance and electro-optic effects of transparent molecular ferroelectrics
Genre
Journal ArticleDate
2017-08-01Author
Zhang, ZLi, PF
Tang, YY
Wilson, AJ
Willets, K
Wuttig, M
Xiong, RG
Ren, S
Subject
0912 Materials EngineeringPermanent link to this record
http://hdl.handle.net/20.500.12613/5121
Metadata
Show full item recordDOI
10.1126/sciadv.1701008Abstract
Copyright © 2017 The Authors, some rights reserved. Recent progress in molecular ferroelectrics (MOFEs) has been overshadowed by the lack of high-quality thin films for device integration. We report a water-based air-processable technique to prepare large-area MOFE thin films, controlled by supersaturation growth at the liquid-air interface under a temperature gradient and external water partial pressure. We used this technique to fabricate ImClO4 thin films and found a large, tunable room temperature electroresistance: a 20-fold resistance variation upon polarization switching. The as-grown films are transparent and consist of a bamboo-like structure of (2, 1-, 0) and (1, 0, 2-) structural variants of R3m symmetry with a reversible polarization of 6.7 μC/cm2. The resulting ferroelectric domain structure leads to a reversible electromechanical response of d33 = 38.8 pm/V. Polarization switching results in a change of the refractive index, n, of single domains, Δn/n = 0.3. The remarkable combination of these characteristics renders MOFEs a prime candidate material for new nanoelectronic devices. The information that we present in this work will open a new area of MOFE thin-film technologies.Citation to related work
American Association for the Advancement of Science (AAAS)Has part
Science AdvancesADA compliance
For Americans with Disabilities Act (ADA) accommodation, including help with reading this content, please contact scholarshare@temple.eduae974a485f413a2113503eed53cd6c53
http://dx.doi.org/10.34944/dspace/5103