Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy
Permanent link to this recordhttp://hdl.handle.net/20.500.12613/4947
MetadataShow full item record
Abstract© 2017 The Author(s). Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+x Ti1-x O3+δ, Ruddlesden-Popper phase La n+1Ni n O3n+1 (n = 4), and LaAl1+y O3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With atomic layer-by-layer laser molecular-beam epitaxy we have produced conducting LaAlO3/SrTiO3 interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.
Citation to related workSpringer Science and Business Media LLC
Has partnpj Quantum Materials
ADA complianceFor Americans with Disabilities Act (ADA) accommodation, including help with reading this content, please contact email@example.com
Except where otherwise noted, this item's license is described as http://creativecommons.org/licenses/by/4.0/