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    Effects of biaxial strain on the improper multiferroicity in h-LuFe O3 films studied using the restrained thermal expansion method

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    1610.00073v1.pdf
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    Genre
    Pre-print
    Date
    2017-03-14
    Author
    Sinha, K
    Zhang, Y
    Jiang, X
    Wang, H
    Wang, X
    Zhang, X
    Ryan, PJ
    Kim, JW
    Bowlan, J
    Yarotski, DA
    Li, Y
    Dichiara, AD
    Cheng, X
    Wu, X
    Xu, X
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    Subject
    cond-mat.mtrl-sci
    cond-mat.mtrl-sci
    Permanent link to this record
    http://hdl.handle.net/20.500.12613/4927
    
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    DOI
    10.1103/PhysRevB.95.094110
    Abstract
    © 2017 American Physical Society. Elastic strain is potentially an important approach in tuning the properties of the improperly multiferroic hexagonal ferrites, the details of which, however, have been elusive due to experimental difficulties. Employing the method of restrained thermal expansion, we have studied the effect of isothermal biaxial strain in the basal plane of h-LuFeO3 (001) films. The results indicate that a compressive biaxial strain significantly enhances the K3 structural distortion (the order parameter of the improper ferroelectricity), and the effect is larger at higher temperatures. The compressive biaxial strain and the enhanced K3 structural distortion together cause an increase in the electric polarization and a reduction in the canting of the weak ferromagnetic moments in h-LuFeO3, according to our first principles calculations. These findings are important for understanding the strain effect as well as the coupling between the lattice and the improper multiferroicity in h-LuFeO3. The experimental elucidation of the strain effect in h-LuFeO3 films also suggests that the restrained thermal expansion can be a viable method to unravel the strain effect in many other thin film materials.
    Citation to related work
    American Physical Society (APS)
    Has part
    Physical Review B
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    ae974a485f413a2113503eed53cd6c53
    http://dx.doi.org/10.34944/dspace/4909
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