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    Electronic structure of the dilute magnetic semiconductor G a1-x M nx P from hard x-ray photoelectron spectroscopy and angle-resolved photoemission

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    1801.04637v1.pdf
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    Genre
    Pre-print
    Date
    2018-04-23
    Author
    Keqi, A
    Gehlmann, M
    Conti, G
    Nemšák, S
    Rattanachata, A
    Minár, J
    Plucinski, L
    Rault, JE
    Rueff, JP
    Scarpulla, M
    Hategan, M
    Pálsson, GK
    Conlon, C
    Eiteneer, D
    Saw, AY
    Gray, AX
    Kobayashi, K
    Ueda, S
    Dubon, OD
    Schneider, CM
    Fadley, CS
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    Subject
    cond-mat.mtrl-sci
    cond-mat.mtrl-sci
    Permanent link to this record
    http://hdl.handle.net/20.500.12613/4678
    
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    DOI
    10.1103/PhysRevB.97.155149
    Abstract
    © 2018 American Physical Society. We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) Ga0.98Mn0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between Ga0.98Mn0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The Ga0.98Mn0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations and a prior HARPES study of Ga0.97Mn0.03As and GaAs [Gray, Nat. Mater. 11, 957 (2012)10.1038/nmat3450], demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP.
    Citation to related work
    American Physical Society (APS)
    Has part
    Physical Review B
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    ae974a485f413a2113503eed53cd6c53
    http://dx.doi.org/10.34944/dspace/4660
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