MgB2 Josephson junctions produced by focused helium ion beam irradiation
Feldman, L. C.
Xi, X. X.
GroupTemple Materials Institute
Helium ion beam lithography
Chemical vapor deposition
Permanent link to this recordhttp://hdl.handle.net/20.500.12613/36
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AbstractPlanar magnesium diboride Josephson junctions are fabricated using focused helium ion beam irradiation. A single track of ion irradiation with a 30 kV He+ beam with nominal beam diameter < 0.5 nm is used to create a normal-metal barrier on a MgB2 film deposited by hybrid physical-chemical vapor deposition. Josephson coupling is observed below the critical temperature of the electrodes for a He+ doses between 8x1015/cm2 to 4x1016/cm2 . Analysis of the temperature dependence of the normal resistance and critical voltage of the junctions shows highly uniform barriers with nearly ideal resistively-shunted junction behavior for higher-dose junctions, while nonequilibrium effects dominate the properties of lower-dose junctions over most of the temperature range. These results demonstrate that focused helium ion beam irradiation can produce high-quality proximity-coupled MgB2 Josephson junctions with tailorable properties, promising for use in superconducting devices and circuits.
CitationKasaei, L., Melbourne, T., Manichev, V., Feldman, L. C., Gustafsson, T., Chen, Ke, Xi, X. X., Davidson, B. A. AIP Advances 8, 075020 (2018); https://doi.org/10.1063/1.5030751
Citation to related workAmerican Institute of Physics
Has partAIP Advances, Vol. 8, No. 7
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