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Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy
Lei, Q Golalikhani, M Davidson, BA Liu, G Schlom, DG Qiao, Q Zhu, Y Chandrasena, RU Yang, W Gray, AX
Lei, Q
Golalikhani, M
Davidson, BA
Liu, G
Schlom, DG
Qiao, Q
Zhu, Y
Chandrasena, RU
Yang, W
Gray, AX
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Journal Article
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2017-12-01
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10.1038/s41535-017-0015-x
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© 2017 The Author(s). Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+x Ti1-x O3+δ, Ruddlesden-Popper phase La n+1Ni n O3n+1 (n = 4), and LaAl1+y O3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With atomic layer-by-layer laser molecular-beam epitaxy we have produced conducting LaAlO3/SrTiO3 interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.
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npj Quantum Materials
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