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Visualization of defect induced in-gap states in monolayer MoS2

Trainer, Daniel J.
; 
Nieminen, Jouko
; 
Bobba, Fabrizio
; 
Wang, Baokai
; 
Xi, Xiaoxing
; 
Bansil, Arun
; 
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Journal article
Date
2022-02-28
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Physics
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Electronic properties and materials
 Two-dimensional materials
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http://hdl.handle.net/20.500.12613/9399
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TrainerEtAl-JournalArticle-2022-02.pdf
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http://dx.doi.org/10.1038/s41699-022-00286-9
Abstract
Atomic-scale intrinsic defects play a key role in controlling functional electronic properties of two-dimensional (2D) materials. Here, we present a low-temperature scanning–tunneling microscopy and spectroscopy investigation of a common point-defect in monolayer molybdenum disulfide (MoS2). We employ a sample preparation method in which the film surface is never exposed to air so that the native dangling bonds surrounding the defects in the film are preserved. Molybdenum vacancies are identified by their three characteristic in-gap resonances by combining scanning–tunneling measurements with parallel Green’s function-based theoretical modeling. The relative energy shifts between the various in-gap states allow us to identify a relative charge difference between two of the observed vacancies. The role of the substrate on the band structure of the defective MoS2 monolayer is unveiled. Our study highlights the effects of the substrate on the in-gap states of common defects found in MoS2 providing a pathway in designing and optimizing 2D materials for electronic applications.
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Trainer, D.J., Nieminen, J., Bobba, F. et al. Visualization of defect induced in-gap states in monolayer MoS2. npj 2D Mater Appl 6, 13 (2022). https://doi.org/10.1038/s41699-022-00286-9
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Nature Research
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npj 2D Materials and Applications, Vol. 6
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